New PowerStar(R) Power Amplifier Module With Integrated pHEMT
Switch Technology Increases RFMD's Potential Dollar Content Within
Handsets By Approximately 20 Percent
GREENSBORO, N.C.--(BUSINESS WIRE)--Feb. 17, 2004--
RF Micro Devices, Inc. (Nasdaq: RFMD), a leading provider of
proprietary radio frequency integrated circuits (RFICs) for wireless
communications applications, today introduced a highly integrated
transmit module (TxM) for quad-band GSM/GPRS cellular handsets.
The RF3177 transmit module contains all of the transmitter
functions from the power amplifier (PA) to the antenna of the handset,
and expands the available market for RFMD's industry-leading
PowerStar(R) family of PA modules.
Measuring 9x10x1.5mm and packaged in a low-cost, laminate-based
module, the RF3177 includes a quad-band PA, integrated power control,
pHEMT antenna switch functionality with four independent receive ports
(RX), as well as all associated filtering, duplexing and control
functions. The RF3177 requires no external matching components and
dramatically simplifies handset design by eliminating the PA-to-switch
matching design effort, thereby accelerating handset manufacturers'
time to market and full type approval (FTA). Additionally, the
quad-band transmit module further simplifies customers' handset
designs by enabling a single device to be used in all four GSM bands
(GSM, EGSM, DCS and PCS).
Eric Creviston, corporate vice president of wireless products at
RF Micro Devices, said, "RF Micro Devices is enabling the introduction
of handsets with greater levels of functionality by leveraging our
expertise in module packaging and integrated circuit design, and by
taking on more of the engineering responsibility previously supported
by our customers. At the same time, we are significantly expanding our
available market and increasing our potential dollar content within
handsets by approximately 20 percent."
Joe Grzyb, general manager of power amplifier products at RF Micro
Devices, said, "The transmit module is the next step toward complete
integration in the transmit chain, which we believe is an emerging
trend in the wireless handset industry. Our customers are increasingly
asking for smaller, more cost-effective solutions that offer increased
functionality in order to help accelerate their feature-rich handsets
to market and reduce their overall bill of materials. The RF3177
PowerStar transmit module answers that demand with its high level of
integration and ease of use. Our customers are particularly interested
in the ability to use one part in multiple applications, thereby
simplifying their supply chain and component qualification processes.
"To date, we continue to experience tremendous success with our
PowerStar PA solutions, and we expect the significant customer
response we have received for the RF3177 transmit module will serve to
extend and strengthen the industry leadership of our PA portfolio,"
About the RF3177
The RF3177 is designed for use as the final component of the
transmit chain in GSM 850, EGSM 900, DCS and PCS handheld digital
cellular equipment. The transmit module's fully integrated silicon
CMOS power control loop meets all spectrum and burst-timing
requirements, with 50 ohm input and output terminals, which simplifies
engineering effort and shortens total design cycle times. The
integrated power control function eliminates the need for directional
couplers, detector diodes, power control ASICs and other power control
circuitry, while providing handset manufacturers the key benefits of
reduced component count, improved production yield, simplified phone
calibration and faster time-to-market. The antenna switch function is
performed by the pHEMT switch. RFMD's proprietary design techniques
allow for low loss, high isolation and world-class harmonic
suppression under high mismatch conditions. Integrated ESD circuitry
provides greater than 8KV ESD protection to meet IEC 61000-4-2
specifications. The RF3177 includes software tools that allow
engineers to calculate ramp profiles instantly and reduce development
time by months. The RF3177 is manufactured using RFMD's gallium
arsenide heterojunction bipolar transistor (GaAs HBT) for the power
amplifier, silicon CMOS for the integrated power control and
pseudomorphic high electron mobility transistor (pHEMT) for the
switch. Measuring 9x10x1.5mm, the RF3177 is packaged in a laminate
package. The RF3177 is available in sample quantities now and will
begin volume production in summer 2004. It is priced at $2.99 in
volumes of 10,000 units.
In addition to the new RF3177, RFMD's PowerStar family of products
includes the first-generation triple-band RF3110, the
second-generation quad-band RF3133 and RF3140, and the
third-generation quad-band RF3146 with Lead Frame Module(TM) packaging
RF Micro Devices, Inc., an ISO 9001- and ISO 14001-certified
manufacturer, designs, develops, manufactures and markets proprietary
RFICs primarily for wireless communications products and applications
such as cellular and PCS phones, base stations, WLANs and cable
television modems. The Company offers a broad array of products -
including amplifiers, mixers, modulators/demodulators, and single-chip
receivers, transmitters and transceivers - representing a substantial
majority of the RFICs required in wireless subscriber equipment. The
Company's goal is to be the premier supplier of low-cost,
high-performance integrated circuits and solutions for applications
that enable wireless connectivity. RF Micro Devices, Inc., is traded
on the Nasdaq National Market under the symbol RFMD. For more
information about RFMD or the RF3177, please visit www.rfmd.com.
Product photography is available by contacting Angie Finney,
336.664.1233, extension 6652 or by downloading it from the product
photography website: http://www.rfmd.com/coInfoPromotionalPhotos.asp .
This press release contains forward-looking statements that relate
to RF Micro Devices' plans, objectives, estimates and goals. Words
such as "expects," "anticipates," "intends," "plans," "projects,"
"believes" and "estimates," and variations of these words and similar
expressions, identify these forward-looking statements. RF Micro
Devices' business is subject to numerous risks and uncertainties,
including variability in quarterly operating results, the rate of
growth and development of wireless markets, risks associated with the
operation of wafer fabrication, molecular beam epitaxy and test, tape
and reel facilities and the Company's conversion from four-inch to
six-inch wafer manufacturing, its ability to manage rapid growth and
to attract and retain skilled personnel, variability in production
yields, its ability to control and reduce costs and improve gross
margins on highly integrated products, dependence on a limited number
of customers and dependence on third parties. These and other risks
and uncertainties, which are described in more detail in RF Micro
Devices' most recent Annual Report on Form 10-K filed with the
Securities and Exchange Commission, could cause actual results and
developments to be materially different from those expressed or
implied by any of these forward-looking statements.
RF MICRO DEVICES(R), RFMD(R), PowerStar(R) and Lead Frame
Module(TM) are trademarks of RFMD, LLC.
CONTACT: RF Micro Devices, Inc.
Jerry Neal or Konrad Alvarino, 336-664-1233
SOURCE: RF Micro Devices, Inc.