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RF Micro Devices Introduces Transmit Module

New PowerStar(R) Power Amplifier Module With Integrated pHEMT Switch Technology Increases RFMD's Potential Dollar Content Within Handsets By Approximately 20 Percent

GREENSBORO, N.C.--(BUSINESS WIRE)--Feb. 17, 2004-- RF Micro Devices, Inc. (Nasdaq: RFMD), a leading provider of proprietary radio frequency integrated circuits (RFICs) for wireless communications applications, today introduced a highly integrated transmit module (TxM) for quad-band GSM/GPRS cellular handsets.

The RF3177 transmit module contains all of the transmitter functions from the power amplifier (PA) to the antenna of the handset, and expands the available market for RFMD's industry-leading PowerStar(R) family of PA modules.

Measuring 9x10x1.5mm and packaged in a low-cost, laminate-based module, the RF3177 includes a quad-band PA, integrated power control, pHEMT antenna switch functionality with four independent receive ports (RX), as well as all associated filtering, duplexing and control functions. The RF3177 requires no external matching components and dramatically simplifies handset design by eliminating the PA-to-switch matching design effort, thereby accelerating handset manufacturers' time to market and full type approval (FTA). Additionally, the quad-band transmit module further simplifies customers' handset designs by enabling a single device to be used in all four GSM bands (GSM, EGSM, DCS and PCS).

Eric Creviston, corporate vice president of wireless products at RF Micro Devices, said, "RF Micro Devices is enabling the introduction of handsets with greater levels of functionality by leveraging our expertise in module packaging and integrated circuit design, and by taking on more of the engineering responsibility previously supported by our customers. At the same time, we are significantly expanding our available market and increasing our potential dollar content within handsets by approximately 20 percent."

Joe Grzyb, general manager of power amplifier products at RF Micro Devices, said, "The transmit module is the next step toward complete integration in the transmit chain, which we believe is an emerging trend in the wireless handset industry. Our customers are increasingly asking for smaller, more cost-effective solutions that offer increased functionality in order to help accelerate their feature-rich handsets to market and reduce their overall bill of materials. The RF3177 PowerStar transmit module answers that demand with its high level of integration and ease of use. Our customers are particularly interested in the ability to use one part in multiple applications, thereby simplifying their supply chain and component qualification processes.

"To date, we continue to experience tremendous success with our PowerStar PA solutions, and we expect the significant customer response we have received for the RF3177 transmit module will serve to extend and strengthen the industry leadership of our PA portfolio," said Grzyb.

About the RF3177

The RF3177 is designed for use as the final component of the transmit chain in GSM 850, EGSM 900, DCS and PCS handheld digital cellular equipment. The transmit module's fully integrated silicon CMOS power control loop meets all spectrum and burst-timing requirements, with 50 ohm input and output terminals, which simplifies engineering effort and shortens total design cycle times. The integrated power control function eliminates the need for directional couplers, detector diodes, power control ASICs and other power control circuitry, while providing handset manufacturers the key benefits of reduced component count, improved production yield, simplified phone calibration and faster time-to-market. The antenna switch function is performed by the pHEMT switch. RFMD's proprietary design techniques allow for low loss, high isolation and world-class harmonic suppression under high mismatch conditions. Integrated ESD circuitry provides greater than 8KV ESD protection to meet IEC 61000-4-2 specifications. The RF3177 includes software tools that allow engineers to calculate ramp profiles instantly and reduce development time by months. The RF3177 is manufactured using RFMD's gallium arsenide heterojunction bipolar transistor (GaAs HBT) for the power amplifier, silicon CMOS for the integrated power control and pseudomorphic high electron mobility transistor (pHEMT) for the switch. Measuring 9x10x1.5mm, the RF3177 is packaged in a laminate package. The RF3177 is available in sample quantities now and will begin volume production in summer 2004. It is priced at $2.99 in volumes of 10,000 units.

In addition to the new RF3177, RFMD's PowerStar family of products includes the first-generation triple-band RF3110, the second-generation quad-band RF3133 and RF3140, and the third-generation quad-band RF3146 with Lead Frame Module(TM) packaging technology.

RF Micro Devices, Inc., an ISO 9001- and ISO 14001-certified manufacturer, designs, develops, manufactures and markets proprietary RFICs primarily for wireless communications products and applications such as cellular and PCS phones, base stations, WLANs and cable television modems. The Company offers a broad array of products - including amplifiers, mixers, modulators/demodulators, and single-chip receivers, transmitters and transceivers - representing a substantial majority of the RFICs required in wireless subscriber equipment. The Company's goal is to be the premier supplier of low-cost, high-performance integrated circuits and solutions for applications that enable wireless connectivity. RF Micro Devices, Inc., is traded on the Nasdaq National Market under the symbol RFMD. For more information about RFMD or the RF3177, please visit www.rfmd.com. Product photography is available by contacting Angie Finney, 336.664.1233, extension 6652 or by downloading it from the product photography website: http://www.rfmd.com/coInfoPromotionalPhotos.asp .

This press release contains forward-looking statements that relate to RF Micro Devices' plans, objectives, estimates and goals. Words such as "expects," "anticipates," "intends," "plans," "projects," "believes" and "estimates," and variations of these words and similar expressions, identify these forward-looking statements. RF Micro Devices' business is subject to numerous risks and uncertainties, including variability in quarterly operating results, the rate of growth and development of wireless markets, risks associated with the operation of wafer fabrication, molecular beam epitaxy and test, tape and reel facilities and the Company's conversion from four-inch to six-inch wafer manufacturing, its ability to manage rapid growth and to attract and retain skilled personnel, variability in production yields, its ability to control and reduce costs and improve gross margins on highly integrated products, dependence on a limited number of customers and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.

RF MICRO DEVICES(R), RFMD(R), PowerStar(R) and Lead Frame Module(TM) are trademarks of RFMD, LLC.

CONTACT: RF Micro Devices, Inc.
Jerry Neal or Konrad Alvarino, 336-664-1233

SOURCE: RF Micro Devices, Inc.

"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements in this press release regarding RF Micro Devices, Inc.'s business which are not historical facts are "forward-looking statements" that involve risks and uncertainties. For a discussion of such risks and uncertainties, which could cause actual results to differ from those contained in the forward-looking statements, see "Risk Factors" in the Company's Annual Report or Form 10-K for the most recently ended fiscal year.